Prof. CHRONG JUNG LIN was born in Taipei, Taiwan in 1969 and received the B.S., M.S., and Ph.D. degrees from the National Tsing-Hua University (NTHU), Hsinchu, Taiwan, R.O.C., in 1991, 1992, and 1996. He obtained his Electrical Engineering Ph.D. degree in 1996 by the study of tunneling enhancement effect of silicon nano-crystal in Flash memory application. From 1996, he had started to work in the Research and Development Division of Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan. His work was mainly focused on the development of advanced 0.13um CMOS logic technology and embedded flash memory on CMOS logic platform. From 1999 to 2003, a 0.25um embedded flash memory for automotive Micro Control Unit (MCU) application has been developed by the research team under his lead. It is the first work of 0.25um automotive split gate Flash chip in the worldwide. Between 2003 and 2005, he had moved on to be in charge of the technology development of 0.18um commercial and automotive embedded flash memory, then successfully to develop 0.18um embedded Flash MCU and Bluetooth chips with the team he lead. During the period of working in R&D, TSMC, he has granted 57 US patents and 43 Taiwan patents in the research field. From 1999, He was awarded every year by TSMC’s top management due to his productive innovation and creativity. Since 2005, he has started to teach in the Institute of Electronics Engineering, the Department of Electrical Engineering of National Tsing Hua University in Taiwan. The orientations of his research include the ReRAMmemory, advanced nonvolatile memories, semiconductor power device, and optical sensors in panel applications.
Prof. Lin has been leading the Microelectronics Laboratory and Advanced Flash memory center of National Tsing Hua University from 2005 until now. A lot of novel memory devices and technologies have been innovated and developed by his research team. After promoted to associate professor, between 2008 to Feb. 2013, total 31 journal papers and 9 important conference papers have been published by Prof. Lin; regarding the ReRAM field, he has had 5 important journal papers and 6 conference papers, those are including 4 IEEE IEDM papers and 2 ISSCC papers, two brand new ReRAM technologies and related physics mechanism have been created and presented in the publications. Moreover, his 2010 and 2012 IEDM (IEEE International Electron Devices Meeting) papers were reported on IEEE Spectrum and London’s EE Times for recognizing the advanced ReRAM technology research of Taiwan. Besides, in the research of nonvolatile memory, 15 journal papers including more than 8 new and innovative NVM cells and technologies have been innovated and presented. Additionally, in terms of Semiconductor Power Device and Light Sensor, he has also published 3 and 9 papers in the two fields, respectively. Moreover, one of his SID (International Society for Display Information Conference) conference papers further granted the award of “Best Paper of the Year 2010” in this famous display forum. In the accomplishment of patent innovation, 10 US patents and 11 TW patents have been granted in 2008 to Feb.2013 and a lot of original works and creative technologies are innovated.
Prof. Lin is a Professor of Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, he also is an IEEE Senior member and Technical Program Committee Member of International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) and the IEEE International Electron Devices Meeting (IEDM, Memory Technology session).