{"id":27,"date":"2018-04-20T21:04:00","date_gmt":"2018-04-20T13:04:00","guid":{"rendered":"http:\/\/well.ee.nthu.edu.tw\/?page_id=27"},"modified":"2018-04-20T21:04:00","modified_gmt":"2018-04-20T13:04:00","slug":"%e8%bf%91%e5%b9%b4%e5%b0%88%e5%88%a9","status":"publish","type":"page","link":"https:\/\/starlab.ee.nthu.edu.tw\/?page_id=27","title":{"rendered":"\u8fd1\u5e74\u5c08\u5229"},"content":{"rendered":"\n\n\n\n\t\n\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t\n\t
<\/th>\u5c08\u5229\u540d\u7a31<\/th>\u570b\u5225<\/th>\u7533\u8acb\u65e5<\/th>\u516c\u958b\/\u516c\u544a\u65e5<\/th>\u516c\u958b\/\u516c\u544a\u865f<\/th>\u7533\u8acb\u4eba<\/th>\u767c\u660e\u4eba<\/th><\/th>\n<\/tr>\n<\/thead>\n
1<\/td>RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACTERISTIC
\nAND FABRICATING METHOD THEREOF
\n<\/td>		\u7f8e\u570b<\/td>2024\/01\/17<\/td>2025\/01\/23<\/td>US-2025-0029655-A1<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434\/\u6797\u5d07\u69ae\/\u6797\u6631\u4e1e\/\u9ec3\u8000\u5f18<\/td><\/td>\n<\/tr>\n
2<\/td>LOW VOLTAGE ONE-TIME-PROGRAMMABLE MEMORY ANDARRAY THEREOF<\/td>\u7f8e\u570b<\/td>2022\/7\/18<\/td>2024\/07\/16<\/td>US 12,040,028 B2 <\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434\/\u6797\u5d07\u69ae\/\u9ec3\u8000\u5f18<\/td><\/td>\n<\/tr>\n
3<\/td>DEFECT MEASUREMENT METHOD<\/td>\u7f8e\u570b<\/td>2021\/01\/06<\/td>2024\/11\/12<\/td>US 12,142,537 B2<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u672c\u5805\/\u6797\u5d07\u69ae\/\u91d1\u96c5\u7434\/\u8521\u5b9c\u9708<\/td><\/td>\n<\/tr>\n
4<\/td>\u5177\u55ae\u5411\u5c0e\u901a\u7279\u6027\u7684\u53ef\u8b8a\u96fb\u963b\u5f0f\u8a18\u61b6\u55ae\u5143\u53ca\u5176\u88fd\u9020\u65b9\u6cd5<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>2023\/07\/21<\/td>2024\/08\/01<\/td>I851350<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u6797\u6631\u4e1e,\u9ec3\u8000\u5f18<\/td><\/td>\n<\/tr>\n
5<\/td>\u534a\u5c0e\u9ad4\u88dd\u7f6e\u53ca\u5176\u88fd\u4f5c\u65b9\u6cd5SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>2022\/07\/22<\/td>2023\/08\/21<\/td>TWI813392B<\/td>\u4e16\u754c\u5148\u9032\u7a4d\u9ad4\u96fb\u8def\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u5289\u5bb6\u614e, \u6eab\u6587\u83ef<\/td><\/td>\n<\/tr>\n
6<\/td>\u4f4e\u96fb\u58d3\u4e00\u6b21\u6027\u5beb\u5165\u8a18\u61b6\u9ad4\u53ca\u5176\u9663\u5217
\r\nLOW VOLTAGE ONE-TIME-PROGRAMMABLE MEMORY AND ARRAY THEREOF<\/td>		\u4e2d\u83ef\u6c11\u570b<\/td>2022\/04\/22<\/td>2023\/03\/01<\/td>TWI795275B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u9ec3\u8000\u5f18<\/td><\/td>\n<\/tr>\n
7<\/td>\u985e\u795e\u7d93\u7db2\u8def\u7cfb\u7d71\u3001\u9ad8\u6548\u7387\u5167\u5d4c\u5f0f\u4eba\u5de5\u7a81\u89f8\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5
\r\nNEURAL NETWORK
\r\nSYSTEM, HIGH EFFICIENCY EMBEDDED ARTIFICIAL SYNAPTIC ELEMENT AND OPERATING METHOD THEREOF<\/td>		\u4e2d\u83ef\u6c11\u570b<\/td>2022\/03\/09
\r\n<\/td>		2023\/05\/21<\/td>TWI803234B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u4f59\u6615\u82ab,\u6797\u5d07\u69ae<\/td><\/td>\n<\/tr>\n
8<\/td>\u985e\u795e\u7d93\u7db2\u8def\u7cfb\u7d71\u3001\u9ad8\u5bc6\u5ea6\u5167\u5d4c\u5f0f\u4eba\u5de5\u7a81\u89f8\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5
\r\nNEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED ARTIFICIAL SYNAPTIC ELEMENT AND OPERATING METHOD THEREOF<\/td>		\u4e2d\u83ef\u6c11\u570b<\/td>2022\/03\/09<\/td>2023\/05\/11<\/td>TWI802313B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u4f59\u6615\u82ab,\u6797\u5d07\u69ae<\/td><\/td>\n<\/tr>\n
9<\/td>\u4e09\u7dad\u96fb\u963b\u5f0f\u8a18\u61b6\u9ad4\u7d50\u69cbTHREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>2022\/01\/24<\/td>2023\/06\/21<\/td>TWI806812B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u9ec3\u8000\u5f18<\/td><\/td>\n<\/tr>\n
10<\/td>\u534a\u5bfc\u4f53\u7ed3\u6784\u53ca\u5176\u5236\u9020\u65b9\u6cd5
\r\nSemiconductor structure and manufacturing method thereof<\/td>		\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>2021\/06\/15<\/td>2021\/10\/22<\/td>CN113539873A<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u6797\u672c\u5805,\u738b\u5efa\u8a55,\u738b\u7d39\u83ef,\u5f35\u4fca\u9716,\u9673\u7acb\u92b3<\/td><\/td>\n<\/tr>\n
11<\/td>\u4f7f\u7528\u534a\u5c0e\u9ad4\u5075\u6e2c\u5668\u7684\u5075
\r\n\u6e2c\u65b9\u6cd5\u8207\u534a\u5c0e\u9ad4\u7d50\u69cb
\r\nDETECTION USING SEMICONDUCTOR DETECTOR AND SEMICONDUCTOR STRUCTURE<\/td>		\u4e2d\u83ef\u6c11\u570b<\/td>2021\/04\/06<\/td>2022\/11\/01<\/td>I782474<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u6797\u672c\u5805,\u738b\u5efa\u8a55,\u738b\u7d39\u83ef,\u5f35\u4fca\u9716,\u9673\u7acb\u92b3<\/td><\/td>\n<\/tr>\n
12<\/td>DETECTION USING
\r\nSEMICONDUCTOR
\r\nDETECTOR<\/td>		\u7f8e\u570b<\/td>2021\/02\/09<\/td>2021\/12\/30<\/td>US20210407764A1<\/td>Taiwan Semiconductor
\r\nManufacturing Co., Ltd.<\/td>		\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u6797\u672c\u5805,\u738b\u5efa\u8a55,\u738b\u7d39\u83ef,\u5f35\u4fca\u9716,\u9673\u7acb\u92b3<\/td><\/td>\n<\/tr>\n
13<\/td>\u534a\u5c0e\u9ad4\u88dd\u7f6e
\r\nSEMICONDUCTOR DEVICE<\/td>		\u4e2d\u83ef\u6c11\u570b<\/td>2019\/04\/03<\/td>2020\/10\/01<\/td>I706532<\/td>\u4e16\u754c\u5148\u9032\u7a4d\u9ad4\u96fb\u8def\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6eab\u6587\u83ef,\u5289\u5bb6\u614e,\u9673\u6587\u9418,\u6797\u5d07\u69ae<\/td><\/td>\n<\/tr>\n
14<\/td>MICRO DETECTOR AND DEFECT MEASUREMENT METHOD<\/td>\u7f8e\u570b<\/td>20190926<\/td>20201008<\/td>US20200321255A1<\/td>National Tsing Hua University <\/td>LIN, Burn-Jeng; LIN, Chrong-Jung; KING, Ya-Chin; TSAI, Yi-Pei<\/td><\/td>\n<\/tr>\n
15<\/td>\u5fae\u578b\u63a2\u6e2c\u5668\u53ca\u7f3a\u9677\u91cf\u6e2c\u65b9\u6cd5 MICRO DETECTOR AND DEFECT MEASUREMENT METHOD<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20190403<\/td>20210401<\/td>TWI723371B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u672c\u5805,\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u8521\u5b9c\u9708<\/td><\/td>\n<\/tr>\n
16<\/td>\u5fae\u578b\u63a2\u6d4b\u5668\u53ca\u7f3a\u9677\u91cf\u6d4b\u65b9\u6cd5 Micro detector and defect measuring method<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20190403<\/td>20201016<\/td>CN111785650A<\/td>\u6797\u5d07\u69ae<\/td>\u6797\u672c\u5805,\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u8521\u5b9c\u9708<\/td><\/td>\n<\/tr>\n
17<\/td>\u30c7\u30fc\u30bf\u4fdd\u5b58\u69cb\u9020\u3092\u6709\u3059\u308b\u534a\u5c0e\u4f53\u69cb\u9020\u3001\u304a\u3088\u3073\u3001\u305d\u306e\u88fd\u9020\u65b9\u6cd5 SEMICONDUCTOR STRUCTURE HAVING DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME<\/td>\u65e5\u672c<\/td>20180202<\/td>20180607<\/td>JP2018088544A<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u856d\u5a49\u52fb,\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u9673\u7687\u9b41,\u5f35\u5b97\u751f<\/td><\/td>\n<\/tr>\n
18<\/td>METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE<\/td>\u7f8e\u570b<\/td>20170609<\/td>20171128<\/td>US09831130B2<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>LO An-Lun; HO Wei-Shuo; CHANG Tzong-Sheng; LIN Chrong-Jung; KING Ya-Chin<\/td><\/td>\n<\/tr>\n
19<\/td>\u975e\u6613\u5931\u6027\u5b58\u50a8\u5355\u5143\u548c\u975e\u6613\u5931\u6027\u5b58\u50a8\u5668 NON-VOLATILE MEMORY CELL AND NON-VOLATILE MEMORY<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20170502<\/td>20171208<\/td>CN107452744A<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5434\u94a7\u96c4,\u91d1\u96c5\u7434,\u6797\u5d07\u8363<\/td><\/td>\n<\/tr>\n
20<\/td>NON-VOLATILE MEMORY CELL AND NON-VOLATILE MEMORY<\/td>\u7f8e\u570b<\/td>20160531<\/td>20171130<\/td>US20170345941A1 <\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>Wu Jiun Shiung ; King Ya-Chin ; Lin Chrong-Jung <\/td><\/td>\n<\/tr>\n
21<\/td>\u30c7\u30fc\u30bf\u4fdd\u5b58\u69cb\u9020\u3092\u6709\u3059\u308b\u534a\u5c0e\u4f53\u69cb\u9020\u3001\u304a\u3088\u3073\u3001\u305d\u306e\u88fd\u9020\u65b9\u6cd5 SEMICONDUCTOR STRUCTURE HAVING DATA STORAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME<\/td>\u65e5\u672c<\/td>20160208<\/td>20160818<\/td>JP2016149551A<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u856d\u5a49\u52fb,\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u9673\u7687\u9b41,\u5f35\u5b97\u751f<\/td><\/td>\n<\/tr>\n
22<\/td>\u534a\u5c0e\u9ad4\u7d50\u69cb\u53ca\u5176\u88fd\u9020\u65b9\u6cd5 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20160205<\/td>20180601<\/td>TWI625857B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u856d\u5a49\u52fb,\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u9673\u7687\u9b41,\u5f35\u5b97\u751f<\/td><\/td>\n<\/tr>\n
23<\/td>\u5177\u6709\u6570\u636e\u5b58\u50a8\u7ed3\u6784\u7684\u534a\u5bfc\u4f53\u7ed3\u6784\u53ca\u5176\u5236\u9020\u65b9\u6cd5 Semiconductor structure with data storage structure and method for manufacturing the same<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20160202<\/td>20200110<\/td>CN105895527B<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u8427\u5a49\u5300,\u91d1\u96c5\u7434,\u6797\u5d07\u8363,\u9648\u7687\u9b41,\u5f20\u5b97\u751f<\/td><\/td>\n<\/tr>\n
24<\/td>\ub370\uc774\ud130 \uc800\uc7a5 \uad6c\uc870\ubb3c\uc744 \uac16\ucd98 \ubc18\ub3c4\uccb4 \uad6c\uc870\ubb3c \ubc0f \uadf8 \uc81c\uc870 \ubc29\ubc95 SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME<\/td>\u97d3\u570b<\/td>20160118<\/td>20180129<\/td>KR101823218B1<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>HSIAO Woan-Yun; KING Ya-Chin; LIN Chrong-Jung; CHEN Huang-Kui; CHANG Tzong-Sheng<\/td><\/td>\n<\/tr>\n
25<\/td>\ubc18\ub3c4\uccb4 \ub514\ubc14\uc774\uc2a4 \uad6c\uc870\ubb3c \ubc0f \uadf8 \ud615\uc131 \ubc29\ubc95 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME<\/td>\u97d3\u570b<\/td>20151023<\/td>20170726<\/td>KR101762015B1<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>LO An-Lun TW; HO Wei-Shuo; CHANG Tzong-Sheng; LIN Chrong-Jung; KING Ya-Chin<\/td><\/td>\n<\/tr>\n
26<\/td>SEMICONDUCTOR STRUCTURE WITH DATA STORAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME<\/td>\u7f8e\u570b<\/td>20151016<\/td>20181002<\/td>US10090360B2<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>HSIAO Woan-Yun; KING Ya-Chin; LIN Chrong-Jung; CHEN Huang-Kui; CHANG Tzong-Sheng<\/td><\/td>\n<\/tr>\n
27<\/td>PROBELESS PARALLEL TEST SYSTEM AND METHOD FOR INTEGRATED CIRCUIT<\/td>\u7f8e\u570b<\/td>20150707<\/td>20161103<\/td>US20160320445A1 <\/td>National Tsing Hua University <\/td>LIN, Chrong-Jung; KING, Ya-Chin; HUANG Shi-Yu<\/td><\/td>\n<\/tr>\n
28<\/td>\u7121\u63a2\u91dd\u5f0f\u7a4d\u9ad4\u96fb\u8def\u5e73\u884c\u6e2c\u8a66\u7cfb\u7d71\u53ca\u5176\u6e2c\u8a66\u65b9\u6cd5 PROBELESS PARALLEL TEST SYSTEM AND METHOD FOR INTEGRATED CIRCUIT<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20150428<\/td>20160611<\/td>TWI537578B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u9ec3\u932b\u745c<\/td><\/td>\n<\/tr>\n
29<\/td>SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME<\/td>\u7f8e\u570b<\/td>20141031<\/td>20170613<\/td>US09679818B2<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>LO An-Lun TW; HO Wei-Shuo; CHANG Tzong-Sheng; LIN Chrong-Jung; KING Ya-Chin<\/td><\/td>\n<\/tr>\n
30<\/td>CONTROL METHOD FOR NONVOLATILE MEMORY DEVICE WITH VERTICALLY STACKED STRUCTURE<\/td>\u7f8e\u570b<\/td>20140327<\/td>20151222<\/td>US09218853B2<\/td>Lite-On IT Corporation<\/td>LIN, Chrong-Jung; PAN, Hsin-Wei<\/td><\/td>\n<\/tr>\n
31<\/td>THREE-DIMENSIONAL INTEGRATED CIRCUIT AND METHOD OF TRANSMITTING DATA WITHIN A THREE-DIMENSIONAL INTEGRATED CIRCUIT<\/td>\u7f8e\u570b<\/td>20140304<\/td>20151103<\/td>US09178132B2<\/td>National Tsing Hua University <\/td>LIN, Chrong-Jung; KING, Ya-Chin; HUANG Shi-Yu<\/td><\/td>\n<\/tr>\n
32<\/td>TRANSISTOR AND FABRICATION METHOD THEREOF<\/td>\u7f8e\u570b<\/td>20140303<\/td>20150319<\/td>US20150076582A1<\/td>National Tsing Hua University <\/td>LIN, Chrong-Jung; KING, Ya-Chin; HUANG Shi-Yu<\/td><\/td>\n<\/tr>\n
33<\/td>\u8fd0\u7528\u4e8e\u5782\u76f4\u9635\u5217\u7ed3\u6784\u7684\u975e\u6325\u53d1\u6027\u5b58\u50a8\u5668\u7684\u63a7\u5236\u65b9\u6cd5 Control method of non-volatile memory used in vertical array structure<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20131230<\/td>20181012<\/td>CN104751890B<\/td>\u5149\u5b9d\u79d1\u6280\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u8363,\u6f58\u4fe1\u73ae<\/td><\/td>\n<\/tr>\n
34<\/td>\u7acb\u9ad4\u7a4d\u9ad4\u96fb\u8def\u53ca\u7acb\u9ad4\u7a4d\u9ad4\u96fb\u8def\u5167\u90e8\u50b3\u905e\u8cc7\u6599\u7684\u65b9\u6cd5 THREE-DIMENSIONAL INTEGRATED CIRCUIT AND METHOD OF TRANSMITTING DATA WITHIN A THREE-DIMENSIONAL INTEGRATED CIRCUIT<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20131204<\/td>20160201<\/td>TWI520391B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
35<\/td>\u96fb\u6676\u9ad4\u53ca\u5176\u88fd\u9020\u65b9\u6cd5 TRANSISTORS AND FABRICATING METHODS THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20130917<\/td>20150401<\/td>TW201513347A<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
36<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5NON-VOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING THE SAME<\/td>\u7f8e\u570b<\/td>2012\/04\/03<\/td>2014\/09\/16<\/td>US08837227B2<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
37<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5NON-VOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING THE SAME<\/td>\u7f8e\u570b<\/td>2012\/04\/03<\/td>2014\/05\/13<\/td>US08724398B2<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
38<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 NON-VOLATILE SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20110607<\/td>20140701<\/td>TWI443780B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
39<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u5143\u4ef6\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 NON-VOLATILE SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20110408<\/td>20140601<\/td>TWI440142B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
40<\/td>METHOD OF FABRICATING PHOTO SENSOR<\/td>\u7f8e\u570b<\/td>20110310<\/td>20120327<\/td>US08143090B2<\/td>WENG CHIEN-SEN, CHAO CHIH-WEI, LIN CHRONG-JUNG, KING YA-CHIN, AU OPTRONICS CORP.<\/td>WENG Chien-Sen; CHAO Chih-Wei; LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
41<\/td>\u5b58\u50a8\u5668\u5355\u5143\u53ca\u975e\u6613\u5931\u6027\u5b58\u50a8\u5668\u88c5\u7f6e\u53ca\u5176\u5f62\u6210\u65b9\u6cd5 Memory unit and nonvolatile memory device and foming method thereof<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20110308<\/td>20130306<\/td>CN102201453B<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6c60\u80b2\u5fb7,\u6797\u5d07\u8363<\/td><\/td>\n<\/tr>\n
42<\/td>PROGRAM AND ERASE METHODS WITH SUBSTRATE TRANSIENT HOT CARRIER INJECTIONS IN A NON-VOLATILE MEMORY<\/td>\u7f8e\u570b<\/td>20110106<\/td>20111206<\/td>US08072810B2<\/td>Macronix International CO., LTD. TW<\/td>HSU, Tzu Hsuan; WU, Chao-I; HSIEH, Kuang Yeu; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
43<\/td>\u53cd\u7194\u4e1d\u53ca\u53cd\u7194\u4e1d\u7684\u5236\u9020\u65b9\u6cd5 Antifuse and method of making the antifuse<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20100916<\/td>20130626<\/td>CN102054817B<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8, \u56fd\u7acb\u6e05\u534e\u5927\u5b66<\/td>\u6c60\u80b2\u5fb7,\u6797\u5d07\u8363<\/td><\/td>\n<\/tr>\n
44<\/td>Bipolar Junction Transistor Having a Carrier Trapping Layer<\/td>\u7f8e\u570b<\/td>20100818<\/td>20111027<\/td>US20110260292A1<\/td>LIN CHRONG-JUNG, KING YA CHIN, TSAI YI-HUNG<\/td>LIN, Chrong-Jung; KING, Ya-Chin; TSAI, Yi-Hung<\/td><\/td>\n<\/tr>\n
45<\/td>\u4e00\u7a2e\u5177\u6709\u8f09\u5b50\u6355\u7372\u5c64\u4e4b\u96d9\u6975\u6027\u63a5\u9762\u96fb\u6676\u9ad4 BIPOLAR JUNCTION TRANSISTOR HAVING A CARRIER TRAPPING LAYER<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20100422<\/td>20130421<\/td>TWI394276B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u8521\u6021\u5b8f<\/td><\/td>\n<\/tr>\n
46<\/td>NANO-CRYSTAL GATE STRUCTURE FOR NON-VOLATILE MEMORY<\/td>\u7f8e\u570b<\/td>20100325<\/td>20130917<\/td>US08536039B2<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>CHIH Yue-Der ; Lin Chrong-Jung <\/td><\/td>\n<\/tr>\n
47<\/td>\u5feb\u9583\u8a18\u61b6\u9ad4\u55ae\u5143 FLASH MEMORY CELL<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20100111<\/td>20140611<\/td>TWI441321B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
48<\/td>\u96d9\u8f09\u5b50\u96fb\u6676\u9ad4 BIPOLAR JUNCTION TRANSISTOR<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20091228<\/td>20130511<\/td>TWI396282B<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
49<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u5143\u4ef6\u3001\u53ef\u7a0b\u5f0f\u8a18\u61b6\u9ad4\u5143\u4ef6\u3001\u96fb\u5bb9\u5668\u8207\u91d1\u5c6c\u6c27\u5316\u534a\u5c0e\u9ad4 NON-VOLATILE SEMICONDUCTOR DEVICE, PROGRAMMABLE MEMORY, CAPACITOR AND METAL OXIDE SEMICONDUCTOR<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>2009\/12\/21<\/td>2013\/09\/01<\/td>TWI407550B<\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
50<\/td>\u53ef\u8b8a\u4e14\u53ef\u9006\u7684\u96fb\u963b\u6027\u5143\u4ef6\u3001\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u55ae\u5143\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5\u8207\u88fd\u9020\u65b9\u6cd5 VARIABLE AND REVERSIBLE RESISTIVE ELEMENT, NON-VOLATILE MEMORY DEVICE AND METHODS FOR OPERATING AND MANUFACTURING THE NON-VOLATILE MEMORY DEVICE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20091202<\/td>20130611<\/td>TWI398954B<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
51<\/td>ANTIFUSE AND METHOD OF MAKING THE ANTIFUSE<\/td>\u7f8e\u570b<\/td>20091027<\/td>20140617<\/td>US08754498B2<\/td>Taiwan Semiconductor Manufacturing Co., Ltd.<\/td>CHIH Yue-Der ; Lin Chrong-Jung <\/td><\/td>\n<\/tr>\n
52<\/td>PROGRAM AND ERASE METHODS WITH SUBSTRATE TRANSIENT HOT CARRIER INJECTIONS IN A NON-VOLATILE MEMORY<\/td>\u7f8e\u570b<\/td>20090810<\/td>20110201<\/td>US07881112B2<\/td>Macronix International CO., LTD. TW<\/td>HSU, Tzu Hsuan; WU, Chao-I; HSIEH, Kuang Yeu; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
53<\/td>VARIABLE AND REVERSIBLE RESISTIVE ELEMENT, NON-VOLATILE MEMORY DEVICE AND METHODS FOR OPERATING AND MANUFACTURING THE NON-VOLATILE MEMORY DEVICE<\/td>\u7f8e\u570b<\/td>20090730<\/td>20120131<\/td>US08107274B2<\/td>Art Talent Industrial Limited BZ<\/td>LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
54<\/td>OPTICAL REFLECTED TOUCH PANEL AND PIXELS AND SYSTEM THEREOF<\/td>\u7f8e\u570b<\/td>20090514<\/td>20120731<\/td>US08232978B2<\/td>AU Optronics Corporation TW<\/td>CHIANG Wen-Jen; CHO An-Thung; LIN Chrong-Jung; PENG Chia-Tien; KING Ya-Chin; LIN Kun-Chih; CHAO Chih-Wei; WENG Chien-Sen; GAN Feng-Yuan<\/td><\/td>\n<\/tr>\n
55<\/td>Flash Memory Cell<\/td>\u7f8e\u570b<\/td>20090323<\/td>20120110<\/td>US08093649B2<\/td>LIN CHRONG-JUNG, KING YA-CHIN, NATIONAL TSING HUA UNIVERSITY<\/td>LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
56<\/td>PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME<\/td>\u7f8e\u570b<\/td>20090317<\/td>20091119<\/td>US20090283772A1<\/td>AU Optronics Corporation TW<\/td>CHO An-Thung; CHIANG Wen-Jen; PENG Chia-Tien; LIN Chrong-Jung; LIN, Kun-Chih, KING Ya-Chin; CHAO Chih-Wei; GAN Feng-Yuan<\/td><\/td>\n<\/tr>\n
57<\/td>TUNABLE CURRENT DRIVER AND OPERATING METHOD THEREOF<\/td>\u7f8e\u570b<\/td>20081225<\/td>20120522<\/td>US08184486B2<\/td>Art Talent Industrial Limited BZ<\/td>LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
58<\/td>\u5355\u6b21\u53ef\u7a0b\u5e8f\u5316\u8bb0\u5fc6\u5355\u5143\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 One time programmable memory unit and operation method thereof<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20081112<\/td>20100616<\/td>CN101740577A <\/td>\u4e9a\u7279\u4f26\u5de5\u4e1a\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u8363,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
59<\/td>\u55ae\u6b21\u53ef\u7a0b\u5f0f\u5316\u8a18\u61b6\u55ae\u5143\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 ONE-TIME PROGRAMMABLE MEMORY AND OPERATING METHOD THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20081103<\/td>20100516<\/td>TW201019464A<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
60<\/td>Photo sensor and flat display panel<\/td>\u7f8e\u570b<\/td>20081021<\/td>20110531<\/td>US07952159B2<\/td>AU OPTRONICS CORP.<\/td>WENG Chien-Sen; CHAO Chih-Wei; LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
61<\/td>\u611f\u5149\u88dd\u7f6e\u7684\u64cd\u4f5c\u7684\u65b9\u6cd5 METHOD FOR OPERATING PHOTOSENSITIVE DEVICE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20081017<\/td>20130221<\/td>TWI392091B<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
62<\/td>Photo Detector and a Display Panel having the Same<\/td>\u7f8e\u570b<\/td>20080718<\/td>20101109<\/td>US07829920B2<\/td>AU Optronics Corporation TW<\/td>CHO An-Thung; PENG Chia-Tien; LIN, Kun-Chih; CHIANG Wen-Jen; CHEN, Chih-Yang; LIN, Chrong-Jung; KING Ya-Chin; CHAO Chih-Wei; WENG, Chien-Sen; GAN Feng-Yuan; <\/td><\/td>\n<\/tr>\n
63<\/td>ONE-TIME PROGRAMMABLE READ-ONLY MEMORY<\/td>\u7f8e\u570b<\/td>20080711<\/td>20100114<\/td>US20100006924A1<\/td>Ememory Technology INC. TW<\/td>CHEN Hsin-Ming; HUANG Shao-Chang; WANG Shih-Chen; LAI Tsung-Mu; HO Ming-Chou; LIN, Chrong-Jung<\/td><\/td>\n<\/tr>\n
64<\/td>One-Time Programmable Memory and Operating Method Thereof<\/td>\u7f8e\u570b<\/td>20080626<\/td>20110308<\/td>US07903444B2<\/td>Art Talent Industrial Limited BZ<\/td>LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
65<\/td>\u5149\u611f\u6d4b\u5355\u5143\u53ca\u5177\u6b64\u5149\u611f\u6d4b\u5355\u5143\u7684\u50cf\u7d20\u7ed3\u6784\u4e0e\u6db2\u6676\u663e\u793a\u9762\u677f Light sensing unit and pixel structure possessing the light sensing unit and liquid crystal display panel<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20080606<\/td>20100623<\/td>CN101285975B<\/td>\u53cb\u8fbe\u5149\u7535\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5353\u6069\u5b97,\u6c5f\u6587\u4efb,\u5f6d\u4f73\u6dfb,\u6797\u5d07\u8363,\u6797\u6606\u5fd7,\u91d1\u96c5\u7434,\u8d75\u5fd7\u4f1f,\u7518\u4e30\u6e90<\/td><\/td>\n<\/tr>\n
66<\/td>\u5149\u5b66\u53cd\u5c04\u5f0f\u89e6\u63a7\u9762\u677f\u53ca\u5176\u50cf\u7d20\u4e0e\u7cfb\u7edf Optical reflection type touching control panel and pixel as well as system<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20080528<\/td>20110119<\/td>CN101281446B<\/td> \u53cb\u8fbe\u5149\u7535\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6c5f\u6587\u4efb,\u5353\u6069\u5b97,\u6797\u5d07\u8363,\u5f6d\u4f73\u6dfb,\u91d1\u96c5\u7434,\u6797\u6606\u5fd7,\u8d75\u5fd7\u4f1f,\u7fc1\u5065\u68ee,\u7518\u4e30\u6e90<\/td><\/td>\n<\/tr>\n
67<\/td>\u5149\u5b78\u53cd\u5c04\u5f0f\u89f8\u63a7\u9762\u677f\u53ca\u5176\u756b\u7d20\u8207\u7cfb\u7d71 OPTICAL REFLECTED TOUCH PANEL AND PIXELS AND SYSTEM THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20080522<\/td>20130611<\/td>TWI386836B<\/td>\u53cb\u9054\u5149\u96fb\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6c5f\u6587\u4efb,\u5353\u6069\u5b97,\u6797\u5d07\u69ae,\u5f6d\u4f73\u6dfb,\u91d1\u96c5\u7434,\u6797\u6606\u5fd7,\u8d99\u5fd7\u5049,\u7fc1\u5065\u68ee,\u7518\u8c50\u6e90<\/td><\/td>\n<\/tr>\n
68<\/td>SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD<\/td>\u7f8e\u570b<\/td>20080522<\/td>20090623<\/td>US07551494B2<\/td>EMEMORY TECHNOLOGY INC.<\/td>LIN, Chrong-Jung; CHEN Hsin-Ming; SHEN Shih-Jye; KING, Ya-Chin; HSU, Ching-Hsiang<\/td><\/td>\n<\/tr>\n
69<\/td>SINGLE-POLY NON-VOLATILE MEMORY CELL<\/td>\u7f8e\u570b<\/td>20080519<\/td>20091119<\/td>US20090283814A1<\/td>CHEN Hsin-Ming; HUANG Shao-Chang; WANG Shih-Chen; CHING Wen-Hao; LIN, Chrong-Jung<\/td>CHEN Hsin-Ming; HUANG Shao-Chang; WANG Shih-Chen; CHING Wen-Hao; LIN, Chrong-Jung<\/td><\/td>\n<\/tr>\n
70<\/td>METHOD FOR OPERATING PHOTOSENSITIVE DEVICE<\/td>\u7f8e\u570b<\/td>2008\/05\/16<\/td>2009\/08\/18<\/td>US07575948B1<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
71<\/td>\u5149\u611f\u6e2c\u55ae\u5143\u53ca\u5177\u6709\u6b64\u5149\u611f\u6e2c\u55ae\u5143\u4e4b\u756b\u7d20\u7d50\u69cb\u8207\u6db2\u6676\u986f\u793a\u9762\u677f PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20080516<\/td>20130611<\/td>TWI398707B<\/td>\u53cb\u9054\u5149\u96fb\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5353\u6069\u5b97,\u6c5f\u6587\u4efb,\u5f6d\u4f73\u6dfb,\u6797\u5d07\u69ae,\u6797\u6606\u5fd7,\u91d1\u96c5\u7434,\u8d99\u5fd7\u5049,\u7518\u8c50\u6e90<\/td><\/td>\n<\/tr>\n
72<\/td>\u4e00\u7a2e\u534a\u5c0e\u9ad4\u8a18\u61b6\u5143\u4ef6\u3001\u4e00\u7a2e\u53ef\u8abf\u5f0f\u96fb\u6d41\u9a45\u52d5\u88dd\u7f6e\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 A MEMORY DEVICE, A TUNABLE CURRENT DRIVER AND AN OPERATING METHOD THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20080507<\/td>20120501<\/td>TWI363425B<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
73<\/td>\u5149\u611f\u61c9\u6574\u5408\u88dd\u7f6e INTEGRATED OPTICAL SENSING APPARATUS<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20080402<\/td>20091016<\/td>TW200942801A <\/td>\u570b\u7acb\u6e05\u83ef\u5927\u5b78<\/td>\u91d1\u96c5\u7434,\u6797\u5d07\u69ae,\u9673\u81f3\u63da<\/td><\/td>\n<\/tr>\n
74<\/td>BLANKET IMPLANT DIODE<\/td>\u7f8e\u570b<\/td>20080220<\/td>20080626<\/td>US20080153243A1<\/td>Vishay General Semiconductors, LLC US<\/td>DAI, Sheng-Huei; KING, Ya-Chin; HUANG, Chun-Jen;KAO, L.C.<\/td><\/td>\n<\/tr>\n
75<\/td>\u5149\u611f\u6d4b\u5143\u4ef6\u53ca\u5176\u5236\u4f5c\u65b9\u6cd5 Light sensing-measuring element and preparation method thereof<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20071116<\/td>20090902<\/td>CN100536172C<\/td> \u53cb\u8fbe\u5149\u7535\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u7fc1\u5065\u68ee,\u8d75\u5fd7\u4f1f,\u6797\u5d07\u8363,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
76<\/td>\u5149\u611f\u6e2c\u5143\u4ef6\u53ca\u5176\u88fd\u4f5c\u65b9\u6cd5 PHOTO SENSOR AND FABRICATION METHOD THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20071023<\/td>20100511<\/td>TWI324832B<\/td>\u53cb\u9054\u5149\u96fb\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u7fc1\u5065\u68ee,\u8d99\u5fd7\u5049,\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
77<\/td>\u7121\u9598\u6975\u975e\u63ee\u767c\u578b\u8a18\u61b6\u80de\u7684\u64cd\u4f5c\u65b9\u6cd5 METHOD OF OPERATING NON-VOLATILE MEMORY CELL WITHOUT GATE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20071003<\/td>20090416<\/td>TW200917466A<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u9673\u4fe1\u9298<\/td><\/td>\n<\/tr>\n
78<\/td>\u5177\u6709\u6e1b\u5c11\u6f0f\u96fb\u6d41\u7684\u534a\u5c0e\u9ad4\u63a5\u9762\u88dd\u7f6e\u53ca\u5176\u5f62\u6210\u65b9\u6cd5 SEMICONDUCTOR JUNCTION DEVICE HAVING REDUCED LEAKAGE CURRENT AND METHOD OF FORMING SAME\"<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070803<\/td>20080316<\/td>TW200814230A<\/td> \u5fae\u5354\u901a\u7528\u534a\u5c0e\u9ad4\u6709\u9650\u8cac\u4efb\u516c\u53f8<\/td>\u6234\u8056\u8f1d,\u91d1\u96c5\u7434,\u6c6a\u6d77\u5be7,\u8523\u9298\u6cf0<\/td><\/td>\n<\/tr>\n
79<\/td>\u5177\u6709\u6e1b\u5c11\u5d29\u6f70\u96fb\u58d3\u4e4b\u4f4e\u96fb\u58d3\u66ab\u614b\u96fb\u58d3\u6291\u5236\u5668 LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR WITH REDUCED BREAKDOWN VOLTAGE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070731<\/td>20160521<\/td>TWI534859B<\/td> \u5fae\u5354\u901a\u7528\u534a\u5c0e\u9ad4\u6709\u9650\u8cac\u4efb\u516c\u53f8<\/td>\u6234\u8056\u8f1d,\u91d1\u96c5\u7434,\u6c6a\u6d77\u5be7,\u8523\u9298\u6cf0<\/td><\/td>\n<\/tr>\n
80<\/td>FABRICATING METHOD OF MOSFET WITH THICK GATE DIELECTRIC LAYER<\/td>\u7f8e\u570b<\/td>20070731<\/td>20080306<\/td>US20080057645A1<\/td>Ememory Technology INC. TW<\/td>CHEN Hsin-Ming; LIN, Chrong-Jung; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
81<\/td>\u5149\u611f\u6d4b\u5668\u4ee5\u53ca\u5177\u6709\u6b64\u5149\u611f\u6d4b\u5668\u7684\u663e\u793a\u9762\u677f Optical sensor and display panel with this part<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20070727<\/td>20091216<\/td>CN100570878C<\/td>\u53cb\u8fbe\u5149\u7535\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5353\u6069\u5b97,\u5f6d\u4f73\u6dfb,\u6797\u6606\u5fd7,\u6c5f\u6587\u4efb,\u9673\u5fd7\u63da,\u6797\u5d07\u8363,\u91d1\u96c5\u7434,\u8d75\u5fd7\u4f1f,\u7fc1\u5065\u68ee,\u7518\u4e30\u6e90<\/td><\/td>\n<\/tr>\n
82<\/td>\u5149\u611f\u6e2c\u5668\u4ee5\u53ca\u5177\u6709\u6b64\u5149\u611f\u6e2c\u5668\u4e4b\u986f\u793a\u9762\u677f A PHOTO DETECTOR AND A DISPLAY PANEL HAVING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070718<\/td>20110621<\/td>TWI344026B<\/td>\u53cb\u9054\u5149\u96fb\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5353\u6069\u5b97,\u5f6d\u4f73\u6dfb,\u6797\u6606\u5fd7,\u6c5f\u6587\u4efb,\u9673\u5fd7\u63da,\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u8d99\u5fd7\u5049,\u7fc1\u5065\u68ee,\u7518\u8c50\u6e90<\/td><\/td>\n<\/tr>\n
83<\/td>NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF<\/td>\u7f8e\u570b<\/td>20070716<\/td>20080124<\/td>US20080017917A1<\/td>Ememory Technology INC. TW<\/td>LIN, Chrong-Jung; CHEN Hsin-Ming; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
84<\/td>Semiconductor junction device having reduced leakage current and method of forming same<\/td>\u7f8e\u570b<\/td>20070712<\/td>20080214<\/td>US20080036048A1<\/td>Vishay General Semiconductors, LLC US<\/td>DAI, Sheng-Huei; KING, Ya-Chin; WANG, Hai-Ning; CHIANG, Ming-Tai<\/td><\/td>\n<\/tr>\n
85<\/td>Low voltage transient voltage suppressor with reduced breakdown voltage<\/td>\u7f8e\u570b<\/td>20070711<\/td>20100615<\/td>US07737533B2<\/td>Vishay General Semiconductors, LLC US<\/td>DAI, Sheng-Huei; KING, Ya-Chin; WANG, Hai-Ning; CHIANG, Ming-Tai<\/td><\/td>\n<\/tr>\n
86<\/td>SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABRICATING METHOD AND OPERATING METHOD THEREOF<\/td>\u7f8e\u570b<\/td>20070405<\/td>20130226<\/td>US08384155B2<\/td>Ememory Technology INC. TW<\/td>LIN, Chrong-Jung; CHEN Hsin-Ming; KING, Ya-Chin<\/td><\/td>\n<\/tr>\n
87<\/td>\u975e\u63ee\u767c\u8a18\u61b6\u9ad4\u57fa\u677f\u77ac\u6642\u71b1\u8f09\u9ad4\u6ce8\u5c04\u7a0b\u5f0f\u5316\u548c\u62b9\u9664\u65b9\u6cd5 PROGRAM AND ERASE METHODS WITH SUBSTRATE TRANSIENT HOT CARRIER INJECTION IN A NON-VOLATILE MEMORY<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070404<\/td>20110901<\/td>TWI348204B<\/td> \u65fa\u5b8f\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u5f90\u5b50\u8ed2,\u5433\u662d\u8abc,\u8b1d\u5149\u5b87,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
88<\/td>\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u53ca\u5176\u88fd\u9020\u65b9\u6cd5 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070326<\/td>20111201<\/td>TWI353672B<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
89<\/td>\u96d9\u9598\u6975\u975e\u63ee\u767c\u578b\u8a18\u61b6\u80de\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 NONVOLATILE MEMORY WITH TWIN GATE AND METHOD OF OPERATING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070309<\/td>20101121<\/td>TWI333691B<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434,\u9673\u4fe1\u9298<\/td><\/td>\n<\/tr>\n
90<\/td>\u539a\u9598\u6975\u4ecb\u96fb\u5c64\u96fb\u6676\u9ad4\u4e4b\u88fd\u9020\u65b9\u6cd5 FABRICATING METHOD OF MOSFET WITH THICK GATE DIELECTRICS<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070302<\/td>20080316<\/td>TW200814203A<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
91<\/td>\u534a\u5c0e\u9ad4\u96fb\u5bb9\u5668\u3001\u55ae\u6b21\u53ef\u7a0b\u5f0f\u5316\u8a18\u61b6\u80de\u53ca\u5176\u88fd\u9020\u65b9\u6cd5\u8207\u64cd\u4f5c\u65b9\u6cd5 SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABRICATING METHOD AND OPERATING METHOD THEREOF<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20070102<\/td>20080201<\/td>TW200807694A<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
92<\/td>\u5948\u7c73\u77fd\u9846\u7c92\u578b\u67b6\u69cb\u4e4b\u5f71\u50cf\u611f\u6e2c\u5143\u4ef6<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>2006\/05\/23<\/td>2009\/07\/11<\/td>TWI312190B<\/td>\u4e9e\u7279\u502b\u5de5\u696d\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
93<\/td>\u96fb\u6676\u9ad4\u55ae\u908a\u975e\u63ee\u767c\u578b\u8a18\u61b6\u80de\u53ca\u5176\u64cd\u4f5c\u65b9\u6cd5 SINGLE NONVOLATILE MEMORY CELL ON SIDEWALL OF MOS AND METHOD OF OPERATING THE SAME<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20060519<\/td>20071201<\/td>TW200744217A<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u91d1\u96c5\u7434<\/td><\/td>\n<\/tr>\n
94<\/td>\u55ae\u5c64\u8907\u6676\u77fd\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u7684\u64cd\u4f5c\u65b9\u6cd5 SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20060310<\/td>20080811<\/td>TWI299866B<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u6c88\u58eb\u5091,\u91d1\u96c5\u7434,\u5f90\u6e05\u7965<\/td><\/td>\n<\/tr>\n
95<\/td>\u55ae\u5c64\u8907\u6676\u77fd\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u7684\u64cd\u4f5c\u65b9\u6cd5 SINGLE-POLY NON-VOLATILE MEMORY DEVICE AND ITS OPERATION METHOD<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20060106<\/td>20080111<\/td>TWI292622B<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u6c88\u58eb\u5091,\u91d1\u96c5\u7434,\u5f90\u6e05\u7965<\/td><\/td>\n<\/tr>\n
96<\/td>\u55ae\u5c64\u8907\u6676\u77fd\u975e\u63ee\u767c\u6027\u8a18\u61b6\u9ad4\u88dd\u7f6e SINGLE-POLY NON-VOLATILE MEMORY DEVICE<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20060103<\/td>20071001<\/td>TWI287868B<\/td>\u529b\u65fa\u96fb\u5b50\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4fe1\u9298,\u6c88\u58eb\u5091,\u91d1\u96c5\u7434,\u5f90\u6e05\u7965<\/td><\/td>\n<\/tr>\n
97<\/td>\u7e2e\u5c0f\u6d6e\u52d5\u9598\u6975\u9593\u8ddd\u4e4b\u534a\u5c0e\u9ad4\u88fd\u7a0b Semiconductor manufacturing process for decreasing floating gate pitch<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20021002<\/td>20031111<\/td>TW561533B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6731\u6587\u5b9a,\u8b1d\u4f73\u9054,\u6797\u5d07\u69ae<\/td><\/td>\n<\/tr>\n
98<\/td>\u53ef\u9078\u64c7\u4f4d\u5143\u8cc7\u6599\u4fee\u6539\u4e4b\u5feb\u9583\u8a18\u61b6\u80de\u9663\u5217\u7d50\u69cb Flash memory cell array structure featuring selectable bit data modification<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20020514<\/td>20070101<\/td> TWI270076B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6c60\u80b2\u5fb7,\u66f9\u6607\u5dcd,\u6797\u5d07\u69ae,\u738b\u6e05\u714c<\/td><\/td>\n<\/tr>\n
99<\/td>\u5206\u95f8\u5f0f\u5feb\u95ea\u8bb0\u5fc6\u80de\u7684\u9009\u62e9\u95f8\u6781\u7684\u5236\u4f5c\u65b9\u6cd5 Manufacturing method of selective gate pole of gate separating type quickflash memory cell<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20020514<\/td>20050504<\/td>CN1200448C<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6731\u6587\u5b9a,\u53f6\u58ee\u683c,\u6797\u5d07\u8363<\/td><\/td>\n<\/tr>\n
100<\/td>\u4f7f\u7528\u6e90\u6781\u6c9f\u6e20\u7684\u5206\u79bb\u6805\u6781\u5f0f\u5feb\u95ea\u5b58\u50a8\u5668\u5143\u4ef6\u5236\u4f5c\u65b9\u6cd5 Method for making source channel used separating grid flash memory component<\/td>\u4e2d\u83ef\u4eba\u6c11\u5171\u548c\u570b<\/td>20020408<\/td>20051123<\/td>CN1228834C<\/td>\u53f0\u6e7e\u79ef\u4f53\u7535\u8def\u5236\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u8c22\u4f73\u8fbe,\u90ed\u8fea\u751f,\u6797\u5d07\u8363,\u6731\u6587\u5b9a<\/td><\/td>\n<\/tr>\n
101<\/td>\u5206\u9598\u5f0f\u5feb\u9583\u8a18\u61b6\u80de\u4e4b\u9078\u64c7\u9598\u6975\u7684\u88fd\u4f5c\u65b9\u6cd5\u53ca\u5176\u7d50\u69cb Manufacturing method of selection gate for the split gate flash memory cell and its structure<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20020206<\/td>20030411<\/td>TW527652B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6731\u6587\u5b9a,\u8449\u58ef\u683c,\u6797\u5d07\u69ae<\/td><\/td>\n<\/tr>\n
102<\/td>\u88fd\u4f5c\u5feb\u9583\u8a18\u61b6\u9ad4\u5143\u4ef6\u4e4b\u65b9\u6cd5 Method to fabricating flash device<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20001018<\/td>20050721<\/td>TWI236733B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u8b1d\u4f73\u9054,\u90ed\u8fea\u751f,\u8449\u58ef\u683c,\u6797\u5d07\u69ae,\u6731\u6587\u5b9a,\u5f35\u50b3\u7406<\/td><\/td>\n<\/tr>\n
103<\/td>\u4f7f\u7528CMP\u5e73\u5766\u5316\u61f8\u6d6e\u9598\u4e4b\u5feb\u9583\u8a18\u61b6\u9ad4 CMP planarized floating gate of flash memory<\/td>\u4e2d\u83ef\u6c11\u570b<\/td>20000421<\/td>20030321<\/td>TW525296B<\/td>\u53f0\u7063\u7a4d\u9ad4\u96fb\u8def\u88fd\u9020\u80a1\u4efd\u6709\u9650\u516c\u53f8<\/td>\u6797\u5d07\u69ae,\u9673\u4e2d,\u8607\u5b8f\u5fb7,\u90ed\u8fea\u751f<\/td><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=\/wp\/v2\/pages\/27"}],"collection":[{"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=27"}],"version-history":[{"count":0,"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=\/wp\/v2\/pages\/27\/revisions"}],"wp:attachment":[{"href":"https:\/\/starlab.ee.nthu.edu.tw\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=27"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}